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| SFT8600 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER'S DATA SHEET FEATURES: * * * * * * * BVCEO to 400 volts Very Low Saturation Voltage Very Low Leakage High Gain from 20 mA to 250 mA 200 C Operating, Gold Eutectic Die Attach Superior Performance over JEDEC 2N5010-15 Series High Speed Switching tf = 0.4S TYP 1 AMP 1000 Volts NPN Transistor Maximum Ratings Symbol Value Units Collector - Emitter Voltage (RBE = 1K) Collector - Base Voltage Emitter - Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 100 C Derate above 25 C Operating and Storage Temperature VCEO VCER VCBO VEBO IC IB PD Tj, Tstg RJC 400 1000 1000 6 1 100 2.0 2.0 -65 to +200 30 V V V A A W mW/C C C/W Thermal Resistance, Junction to Case CASE OUTLINE: TO-5 FIGURE 1 OUTLINE AND DIMENSIONS All dimensions are in inches Tolerances: (unless otherwise specified) XX: 0.01" XXX: 0.005" Pin 1: Pin 2: Pin 3: Case: Emitter Base Collector Collector NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0033 G DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT8600 Electrical Characteristic Symbol BVCEO BVCER BVCBO BVEBO ICBO ICEO IEBO Min 400 1000 1000 6 -- -- -- 10 30 40 20 15 -- -- -- -- 8.0 -- Max -- -- -- 10 500 10 1 Units V V V Adc Adc Adc Collector - Emitter Breakdown Voltage (IC= 10mAdc) (IC= 20Adc, RBE = 1K) Collector-Base Breakdown Voltage (IC= 20Adc) Emitter-Base Breakdown Voltage (IE= 20Adc) Collector Cutoff Current (VCB= 800V) (VCB= 800V @ TC= 150) Collector Cutoff Current (VCE= 400 Vdc) Emitter Cutoff Current (VEB= 4V) DC Current Gain* (IC= 100mAdc, VCE= 5Vdc, TC= -55) (IC= 5mAdc, VCE= 5Vdc) (IC= 10mAdc, VCE= 5Vdc) (IC= 100mAdc, VCE= 5Vdc) (IC= 250mAdc, VCE= 5Vdc) Collector - Emitter Saturation Voltage* (IC= 20mAdc, IB= 2mAdc) (IC= 100mAdc, IB=10mAdc) Base - Emitter Saturation Voltage * (IC= 20mAdc, IB= 2mAdc) (IC=100mAdc, IB=10mAdc) Current Gain Bandwidth Product (IC= 100mAdc, VCE= 10Vdc, f= 10MHz) Output Capacitance (VCB= 20Vdc, IE= 0 Adc, f= 1.0MHz) hFE 200 -- VCE(Sat) 0.3 0.5 0.8 1.0 -- 15 50 150 3 800 Vdc VBE(Sat) fT Vdc MHz pF nsec nsec sec nsec Cob (VCC = 125Vdc, IC = 100 mAdc, IB1 = 20 mAdc, IB2 = 40 mAdc) td tr ts tf Delay Time Rise Time Storage Time Fall Time ----- * Pulse Test: Pulse Width = 300 S, Duty Cycle = 2% For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. |
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